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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8550S
TRANSISTORPNP
(c)
TO 92
FEATURE Power dissipation PCM : 0.625 W Tamb=25ae(c) Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat)
1.EMITTER
2. COLLECTOR
3.BASE
123
unless
Test
otherwise
MIN
specified(c)
TYP MAX UNIT V V V -0.1 -0.1 -0.1 |I A |I A |I A
conditions
Ic= -100|I , IE=0 A Ic= -0.1 mA IB=0 IE= -100|I A IC=0 VCB= -40 V , VCE= -20 V , VEB= - 3 IE=0 IB=0
-40 -25 -5
V IC=0 85 50
VCE= -1 V, IC= -50m A VCE= -1 V, IC= -500m A IC=-500mA, IB=-50 mA IC=-500mA, IB=-50 mA VCE=- 6 V, I =-20mA C
300
-0.6 -1.2
V V
Transition frequency
fT f =30MHz
150
MHz
CLASSIFICATION OF hFE(1)
Rank Range B 85-160 C 120-200 D 160-300
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b |O
e e1
Symbol A A1 b c D D1 E e e1 L O
Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min
L
Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169
C

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